What is the meaning of Vceo, Vcbo and Vebo in Transistor?
2016年3月18日 · No. All voltages are measured as voltage differences. The transistor's leads are b,c and e. o means open circuit.
BJT: reverse BE voltage below VEBO - Page 1 - EEVblog
2020年11月4日 · Operation between forward bias, Ib < Ibmax, and reverse bias < Vebo, is 100% acceptable. I suppose the leakage current that flows, as you approach Vebo, could contribute to the wear mechanism as well, but it's very small of course, uA rather than mA.
Quick question about Transistor values - Page 1 - EEVblog
2014年3月12日 · The Vcbo and Vebo values are the reverse breakdown voltages of those diodes. The 'o' on the end means with the other terminal open. Vcbo = 60V. This means the collector can be 60V max higher than the base for an NPN transistor. (For a PNP transistor the collector can be 60V max lower than the base) Vebo = 5V. This means the emitter can only be ...
PNP BJT: Max. Collector-Emitter Voltage - Page 1 - EEVblog
2021年4月10日 · (Vebo is the voltage from emitter to base, the remaining terminal (collector) being "open".) Or in this case, potentially as low as 4V (note the limit is for guaranteed freedom from breakdown; the actual zener breakdown voltage might be 5-6V, I would guess).
2021年3月3日 · Bipolar Transistors Application Note © 2018-2021 1 2021-03-03 Toshiba Electronic Devices & Storage Corporation
EEVblog #1157 - Transistor Zener Clamp Circuit - Page 1
2018年12月13日 · IMX9/25/26 Vebo are mentioned in the electrical characteristics. High Vebo trannies is used by the audio industry in AC mode to mute popping on outputs when power up/down, base needs to be floating (PNP driver) else it will acts a diode and clip out signal.
>15V Avalanche BJT? - Page 1 - EEVblog
2017年6月14日 · Lateral PNP devices built on NPN integrated circuit processes also have high Vebo which is why they are often used for differential input stages and cascodes to provide high differential input voltage capability like with the 324/358, 4136, 301/301A, 741, 833, etc.
Multiple collectors/emitter per transistor - Page 1 - EEVblog
2020年3月24日 · What they did is simply make an NPN with two collectors and oops forgot about the emitter -- whichever collector is higher voltage, acts as the emitter, and the result is a symmetrical device with low Vce(sat), high breakdown voltage (Vebo ~ 30V, because it's actually Vceo!), and the downside, pitiful hFE (typically 3-10).
Multimeter input protection - what are these BJTs doing? - Page 1
2015年7月29日 · I encountered such a configuration first in the feedback circuit of a precision amplitude sinewave generator,in an avionics circuit, in my work. it was using BJT 2N2369. It was having a VEBO spec of 4.5V, but when reverse biased, with a current-limiting resistor, it always breakdown at 6.9V, acting as a fast zener.
A naive BCY87 experiment - the ref diode - Page 1 - EEVblog
2022年10月4日 · It should be possible to use the bjt's Vebo/Vceo in Zener reverse breakdown. While taking advantage of the tight temperature coupling of the on-die matching. I watched a bunch of videos, explaining the bipolar process since one of the pnp PN junctions looks suspiciously like it could be a buried zener, before concluding that it wouldn't work.