Oxide erosion and Cu dishing in the Cu damascene process are the limiting factors for yield improvement. A simple HSPICE simulation shows that 100Å (~5%) Cu loss may degrade the …
2015年8月3日 · Copper dishing is strongly feature size dependent, but rather insensitive to pattern density. Oxide erosion, on the other hand, is strongly pattern density dependent, but …
In this paper we present experimental data that shows the dependence of copper dishing and oxide ero-sion on pitch and pattern density, as well as on polishing process parameters …
We present a new model for dishing and erosion during chemical-mechanical planarization. According to this model, dishing and erosion is controlled by the local pressure distribution …
Erosion and dishing in Cu CMP reduce the thickness of both dielectric and Cu interconnects and results in surface non-planarity, which can significantly affect the chip performance. Thus, the …
Both erosion and dishing degrade the process quality, cause signifi-cant yield losses in BEOL, and negatively affect interconnect performance, especially for wide global interconnects …
2015年7月11日 · The feature-scale non-uniform polish causes systematic defects found in manufacturing commonly referred to as dishing and erosion. Dishing (the removal of metal …
There exist two common issues that often occur at different pattern densities and line widths are dishing and erosion, as shown in Fig. 1. In STI CMP, dishing is defined as the oxide loss …
2008年11月17日 · Although the main goals of CMP are to achieve a planar surface at the nano-scale without scratches, it is generally the case that copper is preferentially polished, a …
2011年3月18日 · We present a new model for dishing and erosion during chemical-mechanical planarization. According to this model, dishing and erosion is controlled by the local pressure …