晶圆激光退火详解 - 知乎 - 知乎专栏
2023年8月16日 · 脉冲激光退火（PLA, Pulsed Laser Annealing） 使用短时间脉冲的激光器进行退火。 脉冲激光 意味着激光以短暂的脉冲形式发出，而不是连续的 波束 。由于脉冲的短暂性，材料的加热和冷却都是在极短的时间内完成的，因此可以实现非常高的加热速率。
In this work, we will compare junction performance and integratablity of fast-ramp spike, flash, SPER and laser annealing down to 45nm CMOS. The junction depth, abruptness and resistance...
Why Laser Spike Annealing Is the Right Choice for the Digital ...
2022年8月2日 · Annealing is a thermal process used in the far front end of semiconductor device manufacturing to lower silicon resistance and activate dopants injected into crystalline layers for stress relaxation. It is performed before the metal layers are added, and is instrumental in providing a structurally sound foundation for the device.
(PDF) Laser spike annealing and its application to
2008年11月3日 · Laser spike annealing (LSA) is a disruptive technology which has been successfully demonstrated for advanced junction engineering—creating highly activated ultra-shallow junctions with near...
2011年7月14日 · • For P, dopant deactivation occurs at very low T; reverse annealing starts ~650oC. • Original activation is fully recovered after second LSA Tem perature Profiles: LSA vs. FLA
• S/D anneal: Higher activation, improved NMOS strain • High k anneal: Lower leakage, no de-activation • Ti Silicide: Low thermal budget, tight process control
Laser spike annealing for advanced CMOS devices - IEEE Xplore
In this paper, we will explore ways to expand the process window using sub-millisecond laser spike annealing. Focus will be placed on thermal budget reduction and its impact on wafer warpage, Rs-Xj scaling and cross die temperature uniformity. Compatibility with high-k/metal gates and future non-planar device structures will also be discussed.
“Using genetic algorithm to optimize the dummy filling problem of the flash lamp anneal process in semiconductor manufacturing”, J. Intell. Man. (2012) Refs: D. James, AVS JTG Semicon West (2013) and C. Sohn et al.,” IEEE Trans. Elec. Dev., Apr. 2013.
Laser spike annealing for advanced CMOS devices - ResearchGate
2008年6月15日 · In this paper, we will explore ways to expand the process window using sub-millisecond laser spike annealing. Focus will be placed on thermal budget reduction and its impact on wafer warpage,...
Laser spike annealing and its application to leading-edge logic …
Abstract: Laser spike annealing (LSA) is a disruptive technology which has been successfully demonstrated for advanced junction engineering—creating highly activated ultra-shallow junctions with near diffusion-less boundaries. These produce higher performing devices with improved drive currents and/or lower leakage currents, and provide ...
- 某些结果已被删除