Oxide erosion and Cu dishing in the Cu damascene process are the limiting factors for yield improvement. A simple HSPICE simulation shows that 100Å (~5%) Cu loss may degrade the interconnect performance by ~4.6% for the 0.25μm technology. • Erosion can be treated as a oxide polishing problem.
Dishing and Erosion (CMP) |VLSI Concepts - VLSI EXPERT
2015年8月3日 · Copper dishing is strongly feature size dependent, but rather insensitive to pattern density. Oxide erosion, on the other hand, is strongly pattern density dependent, but feature size independent. From the above discussion it is sure that over polishing is main cause of all the CMP effects.
In this paper we present experimental data that shows the dependence of copper dishing and oxide ero-sion on pitch and pattern density, as well as on polishing process parameters including table speed, down force, and process sequence. Specifically, the data shows that the degree of dishing and erosion strongly
We present a new model for dishing and erosion during chemical-mechanical planarization. According to this model, dishing and erosion is controlled by the local pressure distribution between features on the wafer and the polishing pad. The model uses a contact mechanics
Erosion and dishing in Cu CMP reduce the thickness of both dielectric and Cu interconnects and results in surface non-planarity, which can significantly affect the chip performance. Thus, the mechanisms of erosion and dishing must be determined and their impact on process yield addressed. Erosion and dishing problems in
Both erosion and dishing degrade the process quality, cause signifi-cant yield losses in BEOL, and negatively affect interconnect performance, especially for wide global interconnects [1]–[4]. Many attempts have been made to suppress dielectric erosion and metal dishing and incorporate them into design consider-ations.
A Contact Mechanics Formulation for Predicting Dishing and Erosion …
2015年7月11日 · The feature-scale non-uniform polish causes systematic defects found in manufacturing commonly referred to as dishing and erosion. Dishing (the removal of metal faster than the surrounding oxide) and erosion (the excess wear of dielectric materials in regions where there are densely patterned metal lines) are two types of defects that arise ...
Dishing and erosion amount prediction according pattern …
There exist two common issues that often occur at different pattern densities and line widths are dishing and erosion, as shown in Fig. 1. In STI CMP, dishing is defined as the oxide loss relative to the level of the neighboring nitride space, and erosion refers to the nitride loss relative to the nitride level of the neighboring area.
Dishing and Erosion in Cu-CMP | WTC | ASME Digital Collection
2008年11月17日 · Although the main goals of CMP are to achieve a planar surface at the nano-scale without scratches, it is generally the case that copper is preferentially polished, a condition called dishing and erosion, relative to the pattern geometry.
A Contact-Mechanics Based Model for Dishing and Erosion in
2011年3月18日 · We present a new model for dishing and erosion during chemical-mechanical planarization. According to this model, dishing and erosion is controlled by the local pressure distribution between features on the wafer and the polishing pad.